[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [10p-Z10-15] A Gold Proof-Mass Differential MEMS Accelerometer for Micro-G Level Sensing

〇(M1)Akihiro Uchiyama¹, Takashi Ichikawa¹, Tatsuya Koga¹, Shin-ichi Iida², Noboru Ishihara¹, Katsuyuki Machida¹, Kazuya Masu¹, Hiroyuki Ito¹ (1.Tokyo Tech, 2.NTT-AT)

Keywords:MEMS, accelerometer, electrostatic capacitive type

This paper reports a gold proof-mass MEMS accelerometer with differential electrodes to achieve higher resolution for micro-G level sensing. The optimization of the differential structure has been carried out to achieve higher resolution. From the experimental results, the Brownian noise and sensitivity are 154 nG /\sqrt{Hz} and 3.1 pF/G, respectively. The B_N of fabricated device is lower than that of our previous work (430 nG/\sqrt{Hz}). The experimental results confirmed that the proposed gold proof-mass differential sensing structure can be useful to realize micro-G level sensing.