The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 10, 2020 12:30 PM - 5:30 PM Z10

Kuniyuki Kakushima(Tokyo Tech), Tatsuya Okada(Univ. of the Ryukyus)

5:15 PM - 5:30 PM

[10p-Z10-17] 1:1 mode coupling strength in GaAs MEMS resonators investigated by thermal effect

Ya Zhang1, Yuri Yoshioka1 (1.TUAT)

Keywords:MEMS resonator, internal mode couplling, coupling strength

In this work, we investigated the internal mode coupling strength by measuring the anti-crossing property of two neighbored resonant modes of a GaAs MEMS beam resonator. We applied an electrical heat to the MEMS resonator to modulate the resonant frequencies. When the two resonant frequencies approach each other, the frequency shifts saturate and change their direction instead of showing a crossing, indicating the two modes are coupled with each other. The frequency separation between the two branches (~ 20 kHz) represents the coupling strength between two modes. Furthermore, we measured the frequency separations at different driving conditions for the MEMS resonator, from weakly driven in the linear regime to strongly driven in the nonlinear regime. When the resonant amplitude increases to ~10 times of the linear resonance amplitude, we did not observe any notable change in the frequency separation, suggesting that the nonlinear resonance is not a crucial parameter for determining the mode coupling strength.