2020年第81回応用物理学会秋季学術講演会

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13 半導体 » 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

[10p-Z10-1~17] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

2020年9月10日(木) 12:30 〜 17:30 Z10

角嶋 邦之(東工大)、岡田 竜弥(琉球大)

17:15 〜 17:30

[10p-Z10-17] 1:1 mode coupling strength in GaAs MEMS resonators investigated by thermal effect

張 亜1、吉岡 佑理1 (1.農工大工)

キーワード:MEMS共振器, モード間結合, 結合強度

In this work, we investigated the internal mode coupling strength by measuring the anti-crossing property of two neighbored resonant modes of a GaAs MEMS beam resonator. We applied an electrical heat to the MEMS resonator to modulate the resonant frequencies. When the two resonant frequencies approach each other, the frequency shifts saturate and change their direction instead of showing a crossing, indicating the two modes are coupled with each other. The frequency separation between the two branches (~ 20 kHz) represents the coupling strength between two modes. Furthermore, we measured the frequency separations at different driving conditions for the MEMS resonator, from weakly driven in the linear regime to strongly driven in the nonlinear regime. When the resonant amplitude increases to ~10 times of the linear resonance amplitude, we did not observe any notable change in the frequency separation, suggesting that the nonlinear resonance is not a crucial parameter for determining the mode coupling strength.