[11a-Z10-1~10] 13.3 Insulator technology

△ [11a-Z10-7] Evaluation of the SiN Film Formed by Atomic Layer Deposition on Trench Si Substrate.

〇Tappei Nishihara¹, Ryo Yokogawa^1,2, Yuji Otsuki³, Munehito Kagaya³, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.Tokyo Electron Technology Solutions Limited)

Keywords:ALD, SiN, Trench