Oral presentation

[11a-Z10-1~10] 13.3 Insulator technology

Fri. Sep 11, 2020 8:30 AM - 11:15 AM Z10

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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8:30 AM - 8:45 AM

[11a-Z10-1] Fabrication of transparent polyimide insulating films using solvent cast method for isolating LED chips

〇Kota Sato¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

8:45 AM - 9:00 AM

[11a-Z10-2] Inspection and evaluation of chemical solution oxidation methods for metal / Si structures

〇Kazuki Harada¹, Keita Shimura¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

9:00 AM - 9:15 AM

[11a-Z10-3] Properties of low-temperature ALD Al₂O₃ film by high purity ozone

〇Takayuki Hagiwara¹, Ayaka Abe¹, Naoto Kameda¹, Ken Nakamura², Hidehiko Nonaka² (1.MEIDEN NPI, 2.AIST)

9:15 AM - 9:30 AM

[11a-Z10-4] Penetration barrier of alkaline earth metal and copper group ions into SiO₂ and Si₃N₄ films

〇Tomoki Oku¹, Totsuka Masahiro¹, Sasaki Hajime¹ (1.Mitsubishi Electric)

9:30 AM - 9:45 AM

▲ [11a-Z10-5] Study on Deposition Mechanism of SiOx Films Produced by Silicone Oil and Ozone Gas

〇(M2)Weiqi Zhou¹, Susumu Horita¹ (1.JAIST)

9:45 AM - 10:00 AM

[11a-Z10-6] Theoretical study on V_O diffusion in strained Si oxide

Kohei Yata¹, 〇Hiroyuki Kageshima¹ (1.Shimane Univ.)

10:15 AM - 10:30 AM

△ [11a-Z10-7] Evaluation of the SiN Film Formed by Atomic Layer Deposition on Trench Si Substrate.

〇Tappei Nishihara¹, Ryo Yokogawa^1,2, Yuji Otsuki³, Munehito Kagaya³, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.Tokyo Electron Technology Solutions Limited)

10:30 AM - 10:45 AM

▼ [11a-Z10-8] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition of Silicon Dioxide and Silicon Nitride

〇(M1)GE BEIBEI¹, Chen Hua-Hsuan³, Daisuke Ohori^1,2,3, Takuya Ozaki¹, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NCTU)

10:45 AM - 11:00 AM

▲ [11a-Z10-9] First-Principles Calculations of Energy Levels in Metal-Doped Silicon Nitride for Charge Trap Memory Applications

〇(M2)Rahul Agrawal¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

11:00 AM - 11:15 AM

[11a-Z10-10] Diffusion and distribution of oxygen vacancies in transition metal oxides; First principles study

〇(M2)Takuya Oikawa¹, Riki Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

Oral presentation

[11p-Z10-1~8] 13.3 Insulator technology

Fri. Sep 11, 2020 12:30 PM - 2:45 PM Z10

Takanobu Watanabe(Waseda Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 12:45 PM

[11p-Z10-1] Etching of Ge substrate surface by iodine solution treatment

〇(M2)Haruka Mori¹, Hamachi Takeaki¹, Abo Satoshi¹, Sakai Akira¹, Kanashima Takeshi¹ (1.Osaka Univ.)

12:45 PM - 1:00 PM

[11p-Z10-2] Study on improvement of GeO₂ film quality by plasma nitriding

〇Keisuke Ito¹, Yositaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

1:00 PM - 1:15 PM

[11p-Z10-3] Study of GeO₂/Ge structure formed after Hf deposition

〇Haruka Horiguchi¹, Tomo Ueno¹, Yoshitaka Iwazaki¹, Hirotaka Ino¹ (1.Tokyo Univ. of Agri. & Tech.)

1:15 PM - 1:30 PM

[11p-Z10-4] Study of improvement of GeO₂/Ge interface state and GeO₂ film quality by Zr-PMA

〇Hirotaka Iino¹, Tomo Ueno¹, Yoshitaka Iwasaki¹, Haruka Horiguchi¹ (1.Noukou univ.)

1:45 PM - 2:00 PM

[11p-Z10-5] Manufacture and evaluation of MOS gate structure by using TiO₂

〇Kenichirou Toyoda¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

2:00 PM - 2:15 PM

▼ [11p-Z10-6] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate

〇(D)TsungEn Lee¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB₆ metal thin film and LaB_xN_y insulating layer

〇(DC)KyungEun Park¹, Hideki Kamata¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

2:30 PM - 2:45 PM

[11p-Z10-8] The effects of metal oxide layer on resistive switching properties in Al/metal oxide/Si structure

〇Ryota Teragaki¹, Haruhiko Yoshida¹, Koji Arafune¹, Teruo Kanki², Yasushi Hotta¹ (1.Univ. of Hyogo, 2.ISIR-Sanken)

Sessions

13 Semiconductors » 13.3 Insulator technology

[11a-Z10-1~10] 13.3 Insulator technology

[11a-Z10-1] Fabrication of transparent polyimide insulating films using solvent cast method for isolating LED chips

[11a-Z10-2] Inspection and evaluation of chemical solution oxidation methods for metal / Si structures

[11a-Z10-3] Properties of low-temperature ALD Al₂O₃ film by high purity ozone

[11a-Z10-4] Penetration barrier of alkaline earth metal and copper group ions into SiO₂ and Si₃N₄ films

▲ [11a-Z10-5] Study on Deposition Mechanism of SiOx Films Produced by Silicone Oil and Ozone Gas

[11a-Z10-6] Theoretical study on V_O diffusion in strained Si oxide

△ [11a-Z10-7] Evaluation of the SiN Film Formed by Atomic Layer Deposition on Trench Si Substrate.

▼ [11a-Z10-8] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition of Silicon Dioxide and Silicon Nitride

▲ [11a-Z10-9] First-Principles Calculations of Energy Levels in Metal-Doped Silicon Nitride for Charge Trap Memory Applications

[11a-Z10-10] Diffusion and distribution of oxygen vacancies in transition metal oxides; First principles study

[11p-Z10-1~8] 13.3 Insulator technology

[11p-Z10-1] Etching of Ge substrate surface by iodine solution treatment

[11p-Z10-2] Study on improvement of GeO₂ film quality by plasma nitriding

[11p-Z10-3] Study of GeO₂/Ge structure formed after Hf deposition

[11p-Z10-4] Study of improvement of GeO₂/Ge interface state and GeO₂ film quality by Zr-PMA

[11p-Z10-5] Manufacture and evaluation of MOS gate structure by using TiO₂

▼ [11p-Z10-6] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB₆ metal thin film and LaB_xN_y insulating layer

[11p-Z10-8] The effects of metal oxide layer on resistive switching properties in Al/metal oxide/Si structure

Authenticate

Sessions

13 Semiconductors » 13.3 Insulator technology

[11a-Z10-1~10] 13.3 Insulator technology

▲ [11a-Z10-5] Study on Deposition Mechanism of SiOx Films Produced by Silicone Oil and Ozone Gas

△ [11a-Z10-7] Evaluation of the SiN Film Formed by Atomic Layer Deposition on Trench Si Substrate.

▼ [11a-Z10-8] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition of Silicon Dioxide and Silicon Nitride

▲ [11a-Z10-9] First-Principles Calculations of Energy Levels in Metal-Doped Silicon Nitride for Charge Trap Memory Applications

[11p-Z10-1~8] 13.3 Insulator technology

▼ [11p-Z10-6] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB6 metal thin film and LaBxNy insulating layer

Authenticate

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB₆ metal thin film and LaB_xN_y insulating layer