The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[11p-Z10-1~8] 13.3 Insulator technology

Fri. Sep 11, 2020 12:30 PM - 2:45 PM Z10

Takanobu Watanabe(Waseda Univ.)

2:15 PM - 2:30 PM

[11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB6 metal thin film and LaBxNy insulating layer

〇(DC)KyungEun Park1, Hideki Kamata1, Shun-ichiro Ohmi1 (1.Tokyo Tech.)

Keywords:N-doped LaB6, Floating-gate memory, High-k

The nitrogen-doped (N-doped) LaB6 has low resistivity, low work function, and chemical stability. We have reported the thin film quality of N-doped LaB6 electrode (metal : M) and formation of LaBxNy (insulator: I) thin film by Ar/N2 plasma sputtering. In this study, the MIMIS structure diode was investigated to floating-gate memory.