The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[11a-Z10-1~10] 13.3 Insulator technology

Fri. Sep 11, 2020 8:30 AM - 11:15 AM Z10

Yuuichiro Mitani(Tokyo City University)

10:30 AM - 10:45 AM

[11a-Z10-8] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition of Silicon Dioxide and Silicon Nitride

〇(M1)GE BEIBEI1, Chen Hua-Hsuan3, Daisuke Ohori1,2,3, Takuya Ozaki1, Seiji Samukawa1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NCTU)

Keywords:neutral beam, atomic layer deposition, thin film

Neutral beam enhanced atomic layer deposition (NBEALD) is a novel deposition technique for depositing low temperature at 30°C, overcoming the inherent problems in plasma process and precise film thickness control. In this work, this technique was used to form the high-quality silicon dioxide (SiO2) films and silicon nitride (SixNy) films which are widely used in semiconductor protection and passivation. The silicon dioxide (SiO2) films and silicon nitride (SixNy) films were grown at 30°C, using bis(diethylamino)silane (BDEAS) as Si precursor, O2 or N2 as the neutral beam gases to deposit films on Si substrate. We used spectrum ellipsometer to measure film thickness, and the film quality were investigated by X-ray photoelectron spectroscopy (XPS) to analyze the chemical composition of the film. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD.