[8p-Z05-1~20] 6.2 Carbon-based thin films

△ [8p-Z05-1] Achievement of High Current Density (~20 kA/cm²) and Low On-Resistance (2.5mΩ·cm²) in Vertical-Type 2DHG Diamond MOSFET by Trench Gate Structure

〇(B)Kosuke Ota¹, Jun Tsunoda¹, Masayuki Iwataki¹, Kiyotaka Horikawa¹, Syotaro Amano¹, Naoya Niikura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Inst.)

Keywords:Diamond, MOSFET, Vertical type

We have reported a vertical-type 2DHG diamond MOSFET using a C-H terminal structure and a two-dimensional hole gas (2DHG) that is induced by high temperature ALD-Al₂O₃ independent of the plane orientation, and high drain current density and excellent on/off ratio has been realized. In this study, we introduced a trench gate structure with a gate electrode embedded inside the trench, miniaturization of the device by reducing the trench width and increase the thickness of the trench undoped epitaxial layer to induce 2DHG. We achieved an on-current over 20kA/cm² and a low on-resistance of 2 mΩ·cm² range.