Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Makoto Saito(Tohoku Univ.), Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-A302-1] [Young Scientist Presentation Award Speech] Growth of GaN crystals by the point seed technique in a Na-flux method and new trials

〇Masayuki Imanishi¹, Kosuke Murakami¹, Kanako Okumura¹, Kousuke Nakamura¹, Keisuke Kakinouchi¹, Tomoko Kitamura¹, Masahi Yoshimura^1,2, Yusuke Mori¹ (1.Osaka Univ., 2.ILE, Osaka Univ.)

2:00 PM - 2:15 PM

[14p-A302-2] GaN bulk crystal growth by acidic ammonothermal method using a 4-inch-diam. autoclave

〇kouhei kurimoto^1,2, quanxi bao^1,2, makoto saito^1,3, yutaka mikawa³, rinzo kayano², kouhei shima¹, kazunobu kojima¹, toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Works, 3.Mitsubishi Chemical Corp.)

2:15 PM - 2:30 PM

[14p-A302-3] Characterization of ScAlMgO₄ crystal by CZ method to grow GaN epitaxal film

〇Takashi Fujii^1,4, Yuji Shiraishi¹, Toki Nanto¹, Tsuguo Fukuda¹, Hiroyuki Iechi², Ryo Endoh³, Ryuichi Sugie³ (1.Fukuda Crystal Lab., 2.Nippon Univ., 3.TRC, 4.Katsura opt.)

2:30 PM - 2:45 PM

△ [14p-A302-4] The growth of transparent GaN by the Na-flux point-seed method on Li-added flux

〇Tatsuhiko Nakajima¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Osaka Univ., 2.ILE Osaka Univ.)

2:45 PM - 3:00 PM

△ [14p-A302-5] In-situ monitoring of Na-flux crystal growth by electrical resistance measurement

〇(B)Koichi Itozawa¹, Tandryo Ricksen², Kosuke Murakami², Masayuki Imanishi², Masashi Yoshimura³, Yusuke Mori² (1.Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Osaka Univ., 3.ILE , Osaka Univ.)

3:00 PM - 3:15 PM

△ [14p-A302-6] Promotion of nitrogen concentration in Na-flux by applying dynamic temperature profile

〇(M1)Ricksen Tandryo¹, Kosuke Murakami¹, Takumi Yamada¹, Tomoko Kitamura¹, Masayuki Imanishi¹, Masashi Yoshimura², Yusuke Mori¹ (1.Osaka Univ., 2.ILE , Osaka Univ.)

3:15 PM - 3:30 PM

[14p-A302-7] Miscut Angle Measurement of Na-flux GaN substrates Using High-Speed XRD System

〇Miki Moriyama¹, Tetsuya Ozawa², Toru Mitsunaga² (1.TOYODA GOSEI, 2.Rigaku)

3:45 PM - 4:00 PM

[14p-A302-8] [Highlight]Development of Maskless 3D Method to Produce High Quality GaN Substrates

〇Takehiro Yoshida¹ (1.Sciocs)

4:00 PM - 4:15 PM

[14p-A302-9] Properties of the Free-standing GaN Substrates Produced with the Maskless 3D Method

〇Takehiro Yoshida¹ (1.Sciocs)

4:15 PM - 4:30 PM

△ [14p-A302-10] Halide vapor phase epitaxial growth of Mg-doped GaN layers using MgO

〇Kazuki Ohnishi¹, Yuki Amano¹, Naoki Fujimoto², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

4:30 PM - 4:45 PM

[14p-A302-11] Growth of Mg-doped GaN layer using ceramics impregnating impurities by halide vapor phase epitaxy

〇Yuki Amano¹, Kazuki Ohnishi¹, Naoki Fujimoto², Hirotaka Watanabe², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

4:45 PM - 5:00 PM

△ [14p-A302-12] The suppression of polycrystal formation by adding oxide gas in the OVPE-GaN growth

〇(B)Ayumu Shimizu¹, Masahiro Kamiyama², Keiju Ishibashi², Shintaro Tsuno², Akira Kitamoto², Masayuki Imanishi², Masashi Yoshimura³, Tomoaki Sumi⁴, Junichi Takino⁴, Yoshio Okayama⁴, Masahiko Hata⁵, Masashi Isemura⁶, Yusuke Mori² (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.ILE, Osaka Univ., 4.Panasonic Corporation, 5.Itochu Plastics Inc., 6.Sosho-Ohshin Inc.)

5:00 PM - 5:15 PM

[14p-A302-13] Control of Lattice-relaxation for InGaN Thick Films by Tri-Halide Vapor Phase Epitaxy

〇Ryohei Hieda¹, Kentaro Ema¹, Hisashi Murakami¹, Akinori Koukitu¹ (1.TUAT)

5:30 PM - 5:45 PM

[14p-A302-14] Study of surface contamination on single-crystalline GaN layer (Ⅳ)

〇Ai Mizuno¹, Naoki Fukuda¹, Masaki Iwamoto¹, Takuya Osada¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

5:45 PM - 6:00 PM

△ [14p-A302-15] Thermal oxidation of AlInN by mist particle supply

〇(B)Hiroki Matsumoto¹, Sho Iwayama¹, Norikatsu Koide¹, Mahito Odawara¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Takahiro Maruyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

6:00 PM - 6:15 PM

[14p-A302-16] Pillar diameter dependence of internal quantum efficiency and light extraction efficiency in InGaN/GaN nanopillars fabricated by HEATE method

〇Takao Oto¹, Yusuke Namae², Shoma Suzuki¹, Aoto Aihara¹, Akihiko Kikuchi^2,3 (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia PRC)

6:15 PM - 6:30 PM

[14p-A302-17] Etching depth control by selective anodic oxidation in GaN oxide-formed two-step wet-etching method

〇(M2)Yasuharu Kiyotou¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Tech., 2.IIS, The Univ. of Tokyo)

6:30 PM - 6:45 PM

[14p-A302-18] GaN Etching to Maintain Surface Flatness Required for Surface Activated Bonding

〇(B)Naoki Yokoyama¹, Ryo Tanabe¹, Takaya Morikawa¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

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