[12a-PB4-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▲ [12a-PB4-12] Observing photovoltaic action in γ-CuI/Ga₂ O ₃ heterojunction with deep UV irradiation

〇(D)Ajinkya Ranade¹, Muhammed Emre Ayhan², Mandar Shinde¹, Bhagyashri Todankar¹, Pradeep Desai¹, Masaki Tanemura¹, Golap Kalita¹ (1.Nagoya Inst. of Tech., 2.Necmettin Erbakan University)

Keywords:Gallium Oxide, Copper Iodide, Photo voltaic action

Gallium oxide (Ga2O3) with a band gap of in the range of 4.5–4.9 eV is suitable wide band gap semiconductor for deep UV photodetector and power electronic device applications. Ga2 O 3 is a n-type semiconductor due oxygen vacancy which opens possibilities to fabricate a p-n heterojunction with a suitable n-type semiconductor. In this prospect, zinc blend copper iodide (CuI) a p-type semiconductor with bandgap of 3.1eV is good candidate to integrate with Ga2O3. Here, we report on fabrication of CuI Ga2O3 heterojunction which showed photovoltaic action under deep UV irradiation. CuI layer is deposited on Ga2O3 substrate using high vacuum thermal evaporation process at a low chamber pressure and current of 40 A for 20 sec. with substrate temperature of less than 50C. Further, Gold (Au) and Indium (In) are deposited using high vacuum evaporation process as metal contacts for measuring J V characteristics of CuI Ga2O3 heterojunction.the J-V characteristics under dark as well as UV light. A rectifying diode behavior was observed under dark conditions. Further, the device was tested under 254 nm solar blind irradiation as well as longer UV wavelength (365nm) and 300-400 nm UV light. In conclusion, we observed that fabricated CuI/Ga2O3 heterojunction demonstrated diode characteristic along with photovoltaic action under deep UV irradiation (254nm) as well as under 365nm and 300-400nm irradiation.