[12p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12p-A305-10] Design and analysis of virtually nonvolatile SRAM cell for near-threshold voltage operation.

〇Takumi Hara¹, Hayato Yoshida¹, Daiki Kitagata¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo inst. of Tech.)

Keywords:Power-gating, SRAM, Ultra-low static power