[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

△ [12p-B401-4] Deep levels generated by RIE in n-type GaN layer

〇Kazutaka Kanegae¹, Shinji Yamada^2,3,4, Mashahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.ULVAC ISET, 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

Keywords:GaN, RIE, point defect

Reactive ion etching (RIE) is an essential process for fabrication of devices. Point defects generated by RIE should be localized near the etched surface. Thus, it is difficult to detect the point defects and measure the depth profiles of them. In this study, capacitance transient spectroscopy measurements with various reverse bias voltage were performed for GaN Schottky barrier diodes and from the result, the depth profiles of point defects generated by RIE are successfully extracted.