[13a-A205-1~6] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[13a-A205-4] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes(II)

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Giichiro Uchida², Akinori Ebe³ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

Keywords:Reactive Plasma Processes, Oxide semiconductor