Oral presentation

[12p-A205-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Mar 12, 2020 1:45 PM - 6:00 PM A205 (6-205)

Takayuki Ohta(Meijo Univ.), Masanaga Fukasawa(Sony Semiconductor Solutions), Taku Iwase(日立製作所)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[12p-A205-1] Roles of oxygen ion and radical on deposition mechanisms of SiO₂ film in PECVD process using TEOS based plasma

〇HU LI¹, Denpoh Kazuki¹ (1.TTS)

2:00 PM - 2:15 PM

[12p-A205-2] Numerical Analysis of Influence of Ar Mixture-Ratio on DLC surface condition and H content using Ar/CH₄ Plasma-Enhanced CVD Model

〇(M2)Shin Ogawa¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Tech., 2.Meijo Univ., 3.Gifu Univ.)

2:15 PM - 2:30 PM

[12p-A205-3] Color changing mechanism of Plasma Indicator^® under Ar plasma

〇Ayumi Ando¹, Shota Uratani¹, Keiko Nakamura¹, Kazuhiro Uneyama¹ (1.SAKURA COLOR PRODUCTS CORPORATION)

2:30 PM - 2:45 PM

[12p-A205-4] Improved Adhesion Property of Fluoropolymers via Control in Plasma Surface Reaction

〇Yuji Ohkubo¹, Tetsuya Nakagawa¹, Katsuyoshi Endo¹, Kazuya Yamamura¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

[12p-A205-5] Effect of plasma surface treatment on molecular orientation of self-assembled layer

〇Yoshinori Oda¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

3:15 PM - 3:30 PM

△ [12p-A205-6] Study of etching process using CHF3 gas condensed layer in cryogenic region

〇Masahiro Hazumi¹, Suganthamalar Selvaraj², Hsiao Shih-Nan², Sekine Makoto², Hayashi Hisataka^3,2, Sasaki Toshiyuki³, Abe Chihiro³, Tsutsumi Takayoshi², Ishikawa Kenji², Hori Masaru² (1.Nagoya Univ., 2.cLPS, Nagoya Univ, 3.KIOXIA Corp)

3:30 PM - 3:45 PM

△ [12p-A205-7] Estimation of voltage at the top of capillary plate in a CCP

〇Naoya Nakahara¹, Makoto Moriyama¹, Akihiro Mitsuya¹, Haruka Suzuki¹, Hirotaka Toyoda¹ (1.Nagoya Univ.)

3:45 PM - 4:00 PM

△ [12p-A205-8] Absolute charge density evaluation of a capillary plate in a pulse modulated CCP

〇(D)Makoto Moriyama¹, Naoya Nakahara¹, Akihiro Mitsuya¹, Haruka Suzuki¹, Hirotaka Toyada¹ (1.Nagoya Univ.)

4:00 PM - 4:15 PM

[12p-A205-9] The effect of reactive fluorocarbon species on high aspect ratio etching

〇Satoshi Tanida¹, Daiki Iino¹, Shuichi Kuboi¹, Kazuaki Kurihara¹, Hiroyuki Fukumizu¹ (1.Kioxia)

4:15 PM - 4:30 PM

[12p-A205-10] An investigation of novel gases for etching process by computational chemistry

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya University)

4:45 PM - 5:00 PM

[12p-A205-11] Desorption reaction in halogenated layer by low energy ion irradiation

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

5:00 PM - 5:15 PM

▼ [12p-A205-12] Surface fluorination of Y₂O₃ irradiated by low energy F⁺ ion and F radical

〇(M1)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sungil Cho², Hyunjung Park², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

5:15 PM - 5:30 PM

△ [12p-A205-13] Prediction Scheme for Long-Term Electrical Reliability of Plasma-Damaged SiO₂ Films Based on the Percolation Theory

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

[12p-A205-14] Generation and annihilation of plasma-induced defects ~effects of Ar ion irradiation~

〇Shota Nunomura¹, Kazuya Nakane², Takayoshi Tsutsumi², Koji Matsubara¹, Masaru Hori² (1.AIST, 2.Nagoya Univ.)

5:45 PM - 6:00 PM

[12p-A205-15] Generation and annihilation of plasma-induced defects ~H in-diffusion and defects in c-Si~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

Oral presentation

[13a-A205-1~6] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Mar 13, 2020 9:00 AM - 10:30 AM A205 (6-205)

Kosuke Takenaka(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-A205-1] Study on plasma-enhanced chemical vapor deposition of DLC thin films at atmospheric pressure

〇Ryota Nishimura¹, Hiroyuki Yoshiki¹ (1.Tsuruoka Kosen)

9:15 AM - 9:30 AM

[13a-A205-2] Plasma diagnostics of carbon-HiPIMS for depositing DLC film

〇Takayuki Ohta¹, Jo Matsushima¹, Yuichi Murakami¹, Akinori Oda², Hiroyuki Kousaka³ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

9:30 AM - 9:45 AM

△ [13a-A205-3] On-site C₂F₄ generation from CF₄ feedstock gas
using moderate-pressure plasma

〇(M1)Rei Tanaka¹, Tomoyuki Tanaka¹, Daiki Iino², Kazuaki Kurihara², Hiroyuki Fukumizu², Jouta Fukuhara², Hisataka Hayashi², Hiroaki kakiushi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ., 2.Kioxia Corp.)

9:45 AM - 10:00 AM

[13a-A205-4] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes(II)

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Giichiro Uchida², Akinori Ebe³ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

10:00 AM - 10:15 AM

[13a-A205-5] ITO thin films fabricated by hybrid facing-cathode sputtering using dc-rf coupled power supply III

〇Shinichi Morohashi¹ (1.Yamaguchi Univ.)

10:15 AM - 10:30 AM

[13a-A205-6] Chemical bonding state of AlN film deposited in low gas pressure and low-temperature sputtering conditions

〇Yuuto Kawato¹, Mizuho Yoshizuka¹, Taisei Motomura², Tatsuo Tabaru², Masato Uehara², Tetsuya Okuyama¹ (1.NIT Kurume College, 2.AIST)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-A205-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-A205-1] Roles of oxygen ion and radical on deposition mechanisms of SiO₂ film in PECVD process using TEOS based plasma

[12p-A205-2] Numerical Analysis of Influence of Ar Mixture-Ratio on DLC surface condition and H content using Ar/CH₄ Plasma-Enhanced CVD Model

[12p-A205-3] Color changing mechanism of Plasma Indicator^® under Ar plasma

[12p-A205-4] Improved Adhesion Property of Fluoropolymers via Control in Plasma Surface Reaction

[12p-A205-5] Effect of plasma surface treatment on molecular orientation of self-assembled layer

△ [12p-A205-6] Study of etching process using CHF3 gas condensed layer in cryogenic region

△ [12p-A205-7] Estimation of voltage at the top of capillary plate in a CCP

△ [12p-A205-8] Absolute charge density evaluation of a capillary plate in a pulse modulated CCP

[12p-A205-9] The effect of reactive fluorocarbon species on high aspect ratio etching

[12p-A205-10] An investigation of novel gases for etching process by computational chemistry

[12p-A205-11] Desorption reaction in halogenated layer by low energy ion irradiation

▼ [12p-A205-12] Surface fluorination of Y₂O₃ irradiated by low energy F⁺ ion and F radical

△ [12p-A205-13] Prediction Scheme for Long-Term Electrical Reliability of Plasma-Damaged SiO₂ Films Based on the Percolation Theory

[12p-A205-14] Generation and annihilation of plasma-induced defects ~effects of Ar ion irradiation~

[12p-A205-15] Generation and annihilation of plasma-induced defects ~H in-diffusion and defects in c-Si~

[13a-A205-1~6] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[13a-A205-1] Study on plasma-enhanced chemical vapor deposition of DLC thin films at atmospheric pressure

[13a-A205-2] Plasma diagnostics of carbon-HiPIMS for depositing DLC film

△ [13a-A205-3] On-site C₂F₄ generation from CF₄ feedstock gas
using moderate-pressure plasma

[13a-A205-4] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes(II)

[13a-A205-5] ITO thin films fabricated by hybrid facing-cathode sputtering using dc-rf coupled power supply III

[13a-A205-6] Chemical bonding state of AlN film deposited in low gas pressure and low-temperature sputtering conditions

Authentication

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-A205-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12p-A205-6] Study of etching process using CHF3 gas condensed layer in cryogenic region

△ [12p-A205-7] Estimation of voltage at the top of capillary plate in a CCP

△ [12p-A205-8] Absolute charge density evaluation of a capillary plate in a pulse modulated CCP

▼ [12p-A205-12] Surface fluorination of Y2O3 irradiated by low energy F+ ion and F radical

△ [12p-A205-13] Prediction Scheme for Long-Term Electrical Reliability of Plasma-Damaged SiO2 Films Based on the Percolation Theory

[13a-A205-1~6] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [13a-A205-3] On-site C2F4 generation from CF4 feedstock gasusing moderate-pressure plasma

Authentication

▼ [12p-A205-12] Surface fluorination of Y₂O₃ irradiated by low energy F⁺ ion and F radical

△ [12p-A205-13] Prediction Scheme for Long-Term Electrical Reliability of Plasma-Damaged SiO₂ Films Based on the Percolation Theory

△ [13a-A205-3] On-site C₂F₄ generation from CF₄ feedstock gas
using moderate-pressure plasma