[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

△ [13a-B401-8] Temperature dependence of ultra-high-pressure annealing for Mg-ions implanted p-type GaN

〇(B)Kazufumi Hirukawa¹, Hideki Sakurai^1,2,3, Hajime Fujikura⁴, Masahiro Horita^1,2, Michal Bockowski^2,5, Yohei Otoki⁴, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.SCIOCS, 5.UNIPRESS)

Keywords:GaN, Mg ions plantation, Ultra High Pressure Annealing