The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

Fri. Mar 13, 2020 9:00 AM - 11:45 AM B401 (2-401)

Kozo Makiyama(Fujitsu Lab.)

11:00 AM - 11:15 AM

[13a-B401-8] Temperature dependence of ultra-high-pressure annealing for Mg-ions implanted p-type GaN

〇(B)Kazufumi Hirukawa1, Hideki Sakurai1,2,3, Hajime Fujikura4, Masahiro Horita1,2, Michal Bockowski2,5, Yohei Otoki4, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.SCIOCS, 5.UNIPRESS)

Keywords:GaN, Mg ions plantation, Ultra High Pressure Annealing