In-situ annealing of MOVPE grown CdTe layers on (211)Si substrate

Seiya Fujii; Ryoya Tamura; Ryo Torii; Yuki Higashira; Tatsuhiro Kobayashi; Hayata Goto; Yasunori Agata; Madan Niraula; Kazuhito Yasuda

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Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[13a-D215-1~7] 15.2 II-VI and related compounds

Fri. Mar 13, 2020 9:00 AM - 10:45 AM D215 (11-215)

Tamotsu Okamoto(Natl. Inst. of Tech., Kisarazu Col.)

10:00 AM - 10:15 AM

[13a-D215-5] In-situ annealing of MOVPE grown CdTe layers on (211)Si substrate

〇Seiya Fujii¹, Ryoya Tamura¹, Ryo Torii¹, Yuki Higashira¹, Tatsuhiro Kobayashi¹, Hayata Goto¹, Yasunori Agata¹, Madan Niraula¹, Kazuhito Yasuda¹ (1.Nagoya Inst. Tech.)

Keywords:CdTe, annealing, Gamma ray detector

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