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[13a-D419-11] Characterization of 2-inch Diameter β-Ga2O3 Crystals Growth by the VB Technique
Keywords:beta-Ga2O3, dislocation density, FWHM
Characterization of VB-grown 2inch β-Ga2O3 Crystals Growth were investigation by X-ray diffraction and etchpit technique.
It was found that etchpit density in crystals corresponded to results of FWHM.
It was found that etchpit density in crystals corresponded to results of FWHM.