[13a-PA6-1~11] 15.6 IV族系化合物（SiC）

▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs

〇(D)Gyozen Sai¹、Dai Okamoto¹、Noriyuki Iwamoro¹、Hiroshi Yano¹ (1.Univ. Tsukuba)

キーワード：SiC, C(G)-V curve, MOSFET

Split C-V technique was applied on n-channel 4H-SiC MOSFETs to characterize interface properties of SiO₂/SiC structures. The mechanism of the “ledge” and peak shapes in the C_GC-V and G_GC-V curves were explained by interface traps.