[14a-A305-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14a-A305-5] Sidewall planarization in Bosch process

〇Hiroyuki Tanaka^1,2, Hisato Ogiso^1,2, Shizuka Nakano^1,2, Yoshiyuki Nozawa^2,3, Toshihiro Hayami^2,3, Khumpuang Sommawan^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.SPPT)

Keywords:Bosch Process, Minimal, Deep RIE

One of the features of the Bosch process is that it has a very high selectivity ratio to mask. Particularly, when the resist edge portion is wavy, there is a problem that the resist edge portion appears as a vertical stripe pattern reflecting the waving in the etching progress direction on the etching side wall surface. On the other hand, when the interface between the mask and the Si substrate was sputtered with Ar plasma, the flatness of the etched side surface was improved. Careful fabrication of the mask was effective in performing high quality deep etching.