[14a-D221-1~12] 6.2 Carbon-based thin films

△ [14a-D221-7] Evaluation of Radio-Frequency Performance for ALD-Al₂O₃ Polycrystalline Diamond MOSFETs with Maximum Gate Width W_G = 1 mm

〇(B)Masakazu Arai¹, Shoichiro Imanishi¹, Ken Kudara¹, Kiyotaka Horikawa¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken)

Keywords:diamond, high frequency, FET

It is expected as a high-frequency and high-output amplifier because diamond has excellent physical properties. We have reported RF output power density of 3.8 W/mm for a 0.5µm-gate-length ALD-Al₂O₃ diamond MOSFETs with Al₂O₃ deposited to act as gate insulator and passivation film using high-temperature ALD method. To further improve the output power, it is necessary to increase the gate width. In this work, we fabricated ALD-Al₂O₃ 2DHG diamond MOSFETs with gate width W_G expanded from 100 µm to 1 mm and evaluated DC and RF performances.