The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.5 Ion beams

[14a-D305-1~10] 7.5 Ion beams

Sat. Mar 14, 2020 9:15 AM - 12:00 PM D305 (11-305)

Yasuhito Gotoh(Kyoto Univ.), Satoshi Ninomiya(Univ. of Yamanashi)

11:15 AM - 11:30 AM

[14a-D305-8] Characteristics of large ion beams for ion beam etching

Taro Hayakawa1, Yutaka Inouchi1, Tadashi Ikejiri1 (1.Nissin ion equipment)

Keywords:ion beam, etching, ion source

A 300mm wafer size ion source was developed for the ion beam etching (IBE) tool.The characteristics of the ion beam were investigated and the divergence angle of the ion beam was found to be less than 3 degrees for Ar+ 220 eV over the 300 mm region.
The divergence angle is as low as that of the line beam type ion source and the broad beam with the low divergence angle is obtained.