[14a-D305-1~10] 7.5 Ion beams

[14a-D305-8] Characteristics of large ion beams for ion beam etching

〇Taro Hayakawa¹, Yutaka Inouchi¹, Tadashi Ikejiri¹ (1.Nissin ion equipment)

Keywords:ion beam, etching, ion source

A 300mm wafer size ion source was developed for the ion beam etching (IBE) tool.The characteristics of the ion beam were investigated and the divergence angle of the ion beam was found to be less than 3 degrees for Ar+ 220 eV over the 300 mm region.
The divergence angle is as low as that of the line beam type ion source and the broad beam with the low divergence angle is obtained.