The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[14a-PA4-1~5] 13.3 Insulator technology

Sat. Mar 14, 2020 9:30 AM - 11:30 AM PA4 (PA)

9:30 AM - 11:30 AM

[14a-PA4-2] Penetration barrier of alkali metal and halogen ions into SiO2 and Si3N4 films

Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)

Keywords:moisture resistance, alkali metal ions, passivation film

We have been studying the magnitude of moisture resistance by calculating the penetration barrier of H2O molecules and hydrogen halides into SiO2 and Si3N4 films. However, since the effect of alkali metal and halogen ions has not been studied, the penetration barrier of ions (Li+, Na+, K+, F-, Cl-, Br- ) to the SiO2, Si3N4 films were calculated in this report. As a result, it was found that Li+ and Na+ ions easily penetrate into the SiO2, Si3N4 films, and K+ ion penetrates into the SiO2 film more easily than a H2O molecule. In particular, Na+ and K+ ions are thought to form silicate glasses such as SiO2-Na2O and SiO2-K2O.