2:45 PM - 3:00 PM
△ [14p-A305-5] Reduction of metal/n-Ge contact resistivity by epitaxial HfGe2 formation
Keywords:Contact resistivity, HfGe2, TLM
Oral presentation
13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology
Sat. Mar 14, 2020 1:45 PM - 5:30 PM A305 (6-305)
Hiroshi Ikenoue(Kyushu Univ.), Masato Sone(Tokyo Tech)
2:45 PM - 3:00 PM
Keywords:Contact resistivity, HfGe2, TLM