17:30 〜 17:45
▼ [14p-B401-15] Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics
キーワード：Ga2O3, O2 annealing, Lower concentration region
We observed increase in effective dielectric layer thickness of Au/SiO2/β-Ga2O3(001) MOS capacitors after O2 PDA at 1000℃, from capacitance-voltage measurements. However, the SiO2 thickness measured by x-ray reflectivity remained the same. This could be explained by the assumption that surface region of Ga2O3 becomes insulating due to O2 annealing. Besides, a lower carrier concentration region was formed near SiO2/β-Ga2O3 interface.