[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-6] Characterization of 4H-SiC wafer using a Laser Terahertz Emission Microscope at 400 nm

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama^2,3, Masayoshi Tonouchi², Takuji Hosoi⁴, Takayoshi Shimura⁴, Heiji Watanabe⁴ (1.SCREEN, 2.ILE, Osaka Univ., 3.Kyoto Univ., 4.Graduate School of Eng., Osaka Univ.)

Keywords:SiC, Terahertz wave, THz wave, Femtosecond laser

In conventional LTEM system, since the laser beam irradiated on a sample is absorbed in the vicinity of the surface, it is difficult to measure inside the material. In order to excite carriers inside the material, we tried to verify the principle of LTEM using two-photon excitation. THz emission from 4H-SiC wafers was observed using a below-band-gap laser (400 nm). We believe that LTEM can be an evaluation technique which captures current changes inside 4H-SiC wafers.