[15a-A305-1~13] 13.3 絶縁膜技術

▼ [15a-A305-5] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition
of Silicon Nitride

〇HuaHsuan Chen¹、Beibei Ge¹、Daisuke Ohori¹、Tomohiro Kubota²、Dai Ishikawa²、Seiji Samukawa³ (1.IFS, Tohoku Univ.、2.ASM Japan K.K.、3.AIMR, Tohoku Univ.)

キーワード：atomic layer deposition, neutral beam, silicon niitride

Silicon nitride (SiN) films have been widely used in microelectronics and with its applications in passivation, isolation, insulation and etching mask, due to its excellent physical and chemical properties. There are several different methods to deposit SiN films such as low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced atomic layer deposition (PEALD). However, the formation of SiN is extremely difficult. Neutral beam enhanced atomic layer deposition (NBEALD) has previously deposited silicon dioxide (SiO₂) successfully. It takes the advantages of very low temperature at 30°C, overcoming the inherent problems in plasma process and precise film thickness control. In this work, NBEALD technique was investigated into the deposition of SiN films with similar experimental conditions as SiO₂.