[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Wakana Takeuchi^1,3, Mitsuo Sakashita¹, Noriyuki Taoka¹, Mitsuaki Shimizu², Osamu Nakatsuka¹ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.Aichi Inst. of Tech.)

Keywords:4H-SiC, MOS interface, Al2O3