The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Mitsuru Sometani(AIST), Munetaka Noguchi(Mitsubishi Electric)

4:00 PM - 4:15 PM

△ [15p-A201-12] Different effects between NO-POA and H2O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

〇Rimpei Hasegawa1, Koji Kita1 (1.Univ. of Tokyo)

Keywords:p-type SiC MOS interface characteristics

Different effects between NO-POA and H2O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements were clarified.