Simulation for the Crystallization of a-Si Film on PC Substrate using Lumped-shots ELA

Ryousuke Nakatsura; Daaisuke Tokieda; Genta Sakamoto; Tatsuya Okada; Takashi Noguchi

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-A305-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 15, 2020 1:45 PM - 4:30 PM A305 (6-305)

Akito Hara(Tohoku Gakuin Univ.), Tatsuya Okada(Univ. of the Ryukyus)

2:00 PM - 2:15 PM

[15p-A305-2] Simulation for the Crystallization of a-Si Film on PC Substrate using Lumped-shots ELA

〇(M1)Ryousuke Nakatsura¹, Daaisuke Tokieda¹, Genta Sakamoto¹, Tatsuya Okada¹, Takashi Noguchi¹ (1.Ryukyu Univ.)

Keywords:Low-temperature Polycrystalline silicon, Excimer laser annealing, Polycarbonate

We aimed at crystallization of a-Si on Polycarbonate (PC) with low heatproof temperature using Lumped-shots ELA. Simulations suggested that the a-Si layer can be completely melted and that thermal damage to the PC substrate can be reduced by changing the structure of the thermal buffered layer.