[15p-A305-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [15p-A305-7] Fabrication of poly-Si TFTs and CMOS inverter circuits by a laser doping method using coating films

〇(B)Takayuki Kurashige¹, Kaname Imokawa^1,2, Daisuke Nakamura¹, Taizoh Sadoh¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

Keywords:thin film transistors

Low temperature polysilicon (LTPS) thin films are used as channel materials for thin film transistors (TFTs). The LTPS thin film is formed by excimer laser annealing (ELA) on a-Si thin film, and the substrate temperature can be maintained at a low temperature, so that it can be available as a manufacturing process of flexible display using a plastic substrate. In this report, we investigate that n- and p-type doping method for fabrications of n- and p-channel LTPS TFTs. In this method, P and Al doping to the LTPS thin films can be achieved by KrF excimer laser irradiation to the films with phosphoric acid solution and alumina sol coating, respectively. In addition, we will report on the formation and operation characteristics of the CMOS circuit with the n- and p-channel TFTs.