[15p-D215-1~11] 7.3 Micro/Nano patterning and fabrication

[15p-D215-4] Stochastic simulation of pattern formation for chemically amplified resist in extreme ultraviolet lithography

〇(D)Masanori Koyama¹, Masamitsu Shirai¹, Hiroaki Kawata¹, Yoshihiko Hirai¹, Masaaki Yasuda¹ (1.Osaka Pref. Univ.)

Keywords:extreme ultraviolet lithography, chemically amplified resist, lithography simulation

In this study, the pattern formation process of a chemically amplified EUV resist was analyzed using a simulation method based on a stochastic model. Activates the acid generator according to the absorbed energy distribution in the resist to generate acid. The acid diffuses by the random walk method and stops stochastically according to the quencher concentration. During diffusion, the acid causes a deprotection reaction of the monomer within the assumed reaction radius. In the development, the polymer with a certain conversion rate was removed from the resist.