Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

〇(M1)Yuta Komori¹, Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichirou Mizushima², Takashi Ida², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology)

9:15 AM - 9:30 AM

[13a-N305-2] Fabrication and characterization of GaN-HEMT grown on AlN/SiC templates

〇Masatomo Sumiya¹, Osamu Goto², Liwen Sang¹, Yuki Takahara^1,3, Akira Uedono³, Yasutaka Imanak¹, Taichiro Konno², Fumimasa Horikiri², Kenji Kimura², Hajime Fujikura² (1.NIMS, 2.SCIOCS, 3.Univ. of Tsukuba)

9:30 AM - 9:45 AM

▲ [13a-N305-3] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

〇YUWEI ZHANG¹, Soichiro Kawata¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

9:45 AM - 10:00 AM

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

〇(D)Duong Dai Nguyen¹, Takehiro Isoda¹, Yuchen Deng¹, Toshi-kazu Suzuki¹ (1.Jap. Adv. Inst. of Sci. and Tech.)

10:00 AM - 10:15 AM

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al_0.36Ga_0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

〇Akiyoshi Inoue¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

10:15 AM - 10:30 AM

△ [13a-N305-6] Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

〇(M1)Shonosuke Kimura¹, Katsuyuki Miura¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Inst.)

10:45 AM - 11:00 AM

[13a-N305-7] Comparison of channel conduction modes on lateral GaN FinFETs

〇Mitsutaka Sasaki¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

〇Takashi Ota¹, Mitsutaka Sasaki¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

11:15 AM - 11:30 AM

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage

〇Yusuke Hisatsune¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Tsutsui Kazuo¹ (1.Tokyo Tech)

11:30 AM - 11:45 AM

[13a-N305-10] Transient temperature evaluation of GaN bonded on CC

〇Hiroto Saito¹, Aozora Fukui¹, Tomohiro Obata¹, Atsushi Tanaka², Tadatomo Suga³, Kai Takeuchi³ (1.Meikou Univ., 2.Nagoya Univ., 3.Meisei Univ.)

Session information

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

[13a-N305-2] Fabrication and characterization of GaN-HEMT grown on AlN/SiC templates

▲ [13a-N305-3] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al_0.36Ga_0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

△ [13a-N305-6] Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

[13a-N305-7] Comparison of channel conduction modes on lateral GaN FinFETs

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage

[13a-N305-10] Transient temperature evaluation of GaN bonded on CC

Authenticate

Session information

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

[13a-N305-2] Fabrication and characterization of GaN-HEMT grown on AlN/SiC templates

▲ [13a-N305-3] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al0.36Ga0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

△ [13a-N305-6] Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

[13a-N305-7] Comparison of channel conduction modes on lateral GaN FinFETs

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs for Low On-Resistance and High Breakdown Voltage

[13a-N305-10] Transient temperature evaluation of GaN bonded on CC

Authenticate

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al_0.36Ga_0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage