[10p-S301-1~2] 8.8 Plasma Electronics Division Award Speech

[10p-S301-2] [Plasma Electronics Award Speech] Evaluation of plasma-induced damage in Si substrate using pn junction structures

〇Yoshihiro Sato^1,2, Satoshi Shibata¹, Keiichiro Urabe², Koji Eriguchi² (1.Panasonic Corp., 2.Kyoto Univ.)

Keywords:plasma-induced damage, lateral straggling, pn junction

As the device size is scaled down, the effect of "stochastic lateral straggling" of incident species during plasma processing on device performance becomes enhanced. It is difficult to distinguish an extremely small number of defects in the lateral and vertical directions using conventional electrical analysis methods. In this study, we have designed device structures with various distances of pn junction in the lateral direction. We analyzed the change in junction leakage current due to plasma-induced damage using the structures and clarified the density and profile of defects in the lateral direction.