[12a-N102-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [12a-N102-4] Molecular Dynamics Study of Oxide-Nitride Etching by CF₃⁺ Ions

〇(D)Charisse Cagomoc¹, Michiro Isobe¹, Eric Hudson², Satoshi Hamaguchi¹ (1.Osaka University, 2.Lam Research Corp.)

Keywords:molecular dynamics, etching, oxide-nitride

Etching of SiO₂ and Si₃N₄ by fluorocarbon plasma is one of the common processes in the semiconductor industries and is very well studied. However, the feature sizes of semiconductor devices have been continuously shrinking for higher integration. As the feature size becomes closer to atomic sizes, the difficulties in the etching process are being magnified. In line with this, the reaction mechanisms that occur at the interface of an oxide-nitride bilayer as it is etched by energetic CF₃⁺ ions were investigated by molecular dynamics.