[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-N206-5] Temperature dependence of structural, electrical and optical properties of Sn-doped In₂O₃ films formed by solid-phase crystallization

〇Tetsuya Yamamoto¹, Yutaka Furubayashi¹, Hisao Makino¹, Shintaro Kobayashi², Kazuhiko Ishikawa², Katsuhiko Inaba² (1.Kochi Univ. Tech., Res. Inst., 2.RIGAKU Corp.)

Keywords:transparent conductive oxide films, solid-phase crystallization, In2O3

We have been investigating the effects of solid-phase crystallization method on the propeerties of Sn-doped In₂O₃ (ITO) films. Firstly, we deposited 50-nm-thick amorphous ITO films on unintentional heated glass substrates. Then, we formed polycrystalline ITO films with postannealing method; an increase in substrate tempersture by 5 ℃ for 1 minitue up to 300 ℃. We will elucidate the effects of the postannealing on structural, electrical and optical properties of the ITO films.