[12a-N305-1~10] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [12a-N305-3] Automatic Temperature Measurement of SiC Wafer During Millisecond Thermal Processing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹、Keiya Fujimoto¹、Kotaro Matsuguchi¹、Takuma Sato¹、Hiroaki Hanafusa¹、Seiichiro Higashi¹ (1.Hiroshima Univ.)

キーワード：millisecond thermal processing, automatic temperature measurement, SiC wafer

Precise temperature measurement of wafers during millisecond thermal processing is always a matter of great importance. However, techniques which can be applied for this application is limited, especially in plasma process. Hitherto, our laboratory has developed a technique for reproducing three-dimensional temperature distribution in wafer during millisecond thermal processing by human fitting, called OICT. In this work, a general way to conduct automatic temperature measurement will be proposed based on OICT. Furthermore, millisecond thermal annealing technique using Thermal Plasma Jet (TPJ) will also be utilized to illustrate how the automatic temperature measurement is achieved.