[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12p-N102-14] Effect of hydrogen flow ratio on film properties of amorphous carbon deposited by C₃H₆ / H₂ plasma

〇(M2)Jumpei Kurokawa¹, Tadashi Mitsunari^2,3, Takayoshi Tsutsumi³, Hiroki Kondo³, Makoto Sekine³, Kenji Ishikawa³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Tokyo Electron Technology Solutions, 3.Nagoya Univ. Center for Low-temperature Plasma Science)

Keywords:Plasma CVD, Amorphous carbon, Etching mask

We formed amorphous carbon films for etching hardmask application by C₃H₆ / H₂ plasma. When the gas flow ratio was changed, deposition rate increased and residual stress decreased as hydrogen flow ratio increased. On the other hand, intensity ratio of CH / Hα and C₂ / Hα decreased as hydrogen flow ratio increased. Therefore, the increase in deposition rate is considered to be due to the increase in dangling bond formation by hydrogen ion collision because the radicals containing C decreased. Regarding the decrease in residual stress, It is suggested that defects created by breaking C-C bonds due to hydrogen ion collision relieve the residual stress.