[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-13] RF Power Performance of Submicron Ga₂O₃ MOSFETs

〇Takafumi Kamimura¹, Roberto Quaglia², Martin Kuball³, Paul Tasker², Masataka Higashiwaki¹ (1.NICT, 2.Cardiff Univ., 3.Univ. of Bristol)

Keywords:Ga2O3, RF FET, load-pull

We performed 1 GHz load-pull measurements of Ga₂O₃ MOSFETs whose channel and contacts were formed by Si ion implantation doping to evaluate their RF input/output characteristics.
The maximum output power of 17.6 dBm was obtained at input power of 3.9 dBm, which translates into a power density of 580 mW/mm, which is a good value for a Ga₂O₃ FET. Note that the result was not obtained under the optimum condition due to the lack of matching caused by too high input impedance.