[22p-P06-1~15] 12.4 Organic light-emitting devices and organic transistors

[22p-P06-12] Novel device structure for printed organic source-gated transistors with high gain and low operation voltage

〇(M1)Yuji Ikeda¹, Yudai Henmi¹, Radu Sporea², Hiroyuki Matsui¹ (1.ROEL, Yamagata Univ., 2.Univ. of Surrey)

Keywords:Organic transistor, Source-gated transistor(SGT), Ph-BTBT-C10

With the spread of wearable devices, the development of low-power and high-gain organic transistor (OFET) circuits are required. The source-gated transistor (SGT), which has Schottky barrier at the source electrode, is suitable for wearable devices due to its low voltage operation and high gain. In this research, we have developed an OSGT using a novel structure and succeeded in lowering the operation voltage and increasing the gain compared to the conventional OFET structure without lowering the yield.