[23a-P06-1~5] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [23a-P06-3] Application of Millisecond Solid Phase Crystallization of Silicon Films Induced by Micro-Thermal-Plasma-Jet to Bottom-Gate Thin-Film Transistors

〇(DC)Nguyen ThiKhanh Hoa¹、Hiroaki Hanafusa¹、Seiichiro Higashi¹ (1.Hiroshima Univ.)

キーワード：millisecond solid phase crystallization, bottom gate thin film transistor, silicon film