Poster presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[23a-P06-1~5] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 23, 2021 9:00 AM - 10:40 AM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 10:40 AM

[23a-P06-1] Study on PD Structures of SOI-Si/4H-SiC Hybrid Image Sensors

〇(M1)Masayuki Tsutsumi¹, Tatsuya Meguro¹, Kazuya Kawamura¹, Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

9:00 AM - 10:40 AM

[23a-P06-2] Device characteristics instability in thin-film SOI power MOSFETs at high temperature

〇Riki Yamanishi¹, Satoshi Matsumoto¹ (1.Grad. Sch. KIT)

9:00 AM - 10:40 AM

▲ [23a-P06-3] Application of Millisecond Solid Phase Crystallization of Silicon Films Induced by Micro-Thermal-Plasma-Jet to Bottom-Gate Thin-Film Transistors

〇(DC)Nguyen ThiKhanh Hoa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

9:00 AM - 10:40 AM

[23a-P06-4] Improvement of current drivability for metal S/D Ge n-MOSFET by introduction of recessed channel structure

〇Takuro Matsuo¹, Keisuke Yamamoto¹, Dong Wang¹ (1.Kyushu Univ.)

9:00 AM - 10:40 AM

[23a-P06-5] MEMS Rogowski Coil Current Sensor with Spiral Return Coil

〇Yoshiyuki Watanabe¹, Mutsuto Kato¹, Toru Yahagi¹, Hiroki Murayama¹, Naoya Yamada¹, Kenichi Yoshida², Kenichi Maehara², Yusuke Fukuda², Kazuyuki Sashida², Katsuya Ikeda², Kosuke Ikeda², Toshiyuki Takemori² (1.Yamagata RIT, 2.Shindengen)

Session information

[23a-P06-1~5] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[23a-P06-1] Study on PD Structures of SOI-Si/4H-SiC Hybrid Image Sensors

[23a-P06-2] Device characteristics instability in thin-film SOI power MOSFETs at high temperature

▲ [23a-P06-3] Application of Millisecond Solid Phase Crystallization of Silicon Films Induced by Micro-Thermal-Plasma-Jet to Bottom-Gate Thin-Film Transistors

[23a-P06-4] Improvement of current drivability for metal S/D Ge n-MOSFET by introduction of recessed channel structure

[23a-P06-5] MEMS Rogowski Coil Current Sensor with Spiral Return Coil

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