[18a-Z27-1~9] 15.4 III-V-group nitride crystals

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[18a-Z27-1] Growth temperature dependence of GaN nucleation on graphene/r-plane sapphire template

〇(M1)Kazuki Niwa¹, Takeshi Fukami¹, Masami Nonogaki¹, Yukito Kato¹, Yuki Ueda¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

9:15 AM - 9:30 AM

△ [18a-Z27-2] Preparation of GaN-based LEDs on a multi-crystalline Si substrate and white-light emission

〇Sinngo Taniguchi¹, Houyao Xue¹, Sora Saito¹, Tsubasa Saito¹, Yuichi Sato¹ (1.Akita Univ.)

9:30 AM - 9:45 AM

△ [18a-Z27-3] Study on the crystal growth conditions of non-polar AlN on Si for GaN template substrate

〇Masaya Morita^1,2, Keiji Ishibashi³, Kenichiro Takahashi³, Toyohiro Chikyow², Atsushi Ogura^1,4, Takahiro Nagata² (1.Meiji Univ., 2.NIMS, 3.COMET Inc., 4.MREL)

9:45 AM - 10:00 AM

[18a-Z27-4] Changes in the lattice relaxation process for the number of Si layer inserted at the initial stage of GaInN growth on GaN

〇(M1)Haruka Yokoyama¹, Tomohiro Yamaguchi¹, Takuo Sasaki², Soichiro Ohno¹, Takanori Kiguchi³, Hiroki Hirukawa¹, Seiji Fujikawa², Masamitu Takahasi², Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ., 2.QST, 3.Tohoku Univ.)

10:00 AM - 10:15 AM

[18a-Z27-5] Effect of n-GaN flat layer on InGaN/AlGaN MQWs in GaN-based nanocolumns

〇Jumpei Yamada¹, Tatsuya Honda¹, Keigo Yoshida², Rie Togashi¹, Ichiro Nomura¹, Tomohiro Yamaguchi², Tohru Honda², Katsumi Kishino¹ (1.Sophia Univ., 2.Kogakuin Univ.)

10:30 AM - 10:45 AM

[18a-Z27-6] Growth of AlN Single Crystals using Flux-Film-Coated Sputtering technique.

〇Yelim Song^1,2, Fumio Kawamura¹, Naoki Ohashi^1,3, Kiyoshi Shimamura^1,2 (1.NIMS, 2.Waseda Univ., 3.Tokyo Inst. Tech. Univ.)

10:45 AM - 11:00 AM

[18a-Z27-7] Fabrication of AlGaN films by sputtering deposition and face-to-face annealing

〇Shigeyuki Kuboya¹, Sho Iwayama², Kenjiro Uesugi¹, Kanako Shojiki³, Kenji Norimatsu¹, Hideto Miyake^2,3 (1.SPORR, Mie Univ., 2.Grad. Sch. of RIS, Mie Univ., 3.Grad. Sch. of Eng., Mie Univ.)

11:00 AM - 11:15 AM

[18a-Z27-8] Growth of coherent AlN/AlGaN heterostructures and its application to transistors

〇Ryota Maeda¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS, The Univ. of Tokyo)

11:15 AM - 11:30 AM

[18a-Z27-9] Characterization of Schottky barrier height for metal/lightly p-type doped GaN interface on vertical SBDs

〇Kohei Aoyama¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.Institute of Industrial Science, The University of Tokyo)

Session information