[17a-Z03-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-Z03-9] Lateral Etching of Aluminum Thin Film Deposited on Glass Substrate using Atmospheric-Pressure Plasma Jet (II)

〇Iori Hirashima¹, Hiroshi Kuwahata¹ (1.Toukai Univ.)

Keywords:atmospheric-pressure plasma jet, aluminum, etching

An aluminum (Al) thin film deposited on a glass substrate was irradiated with an atmospheric-pressure argon (Ar) plasma jet. The thin film was placed on an insulating plate and on a grounded metal plate during irradiation, and the two results were compared. For the Al thin film placed on the grounded metal plate during irradiation, the Al etching rate in the lateral direction increased approximately 1.6-fold.It was found that irradiating an Al thin film on a grounded metal plate with an atmospheric-pressure Ar plasma jet is effective for improving the Al etching rate in the lateral direction.