[17p-Z26-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17p-Z26-10] Proposal of subband engineering in InAs-OI nMOSFETs by channel thickness scaling of (111)-oriented channel and fabrication of UTB (111) InAs-OI substrates

〇(DC)Kei Sumita¹, Ryohei Yoshizu², Kasidit Toprasertpong^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Univ. Tokyo, 2.Univ. Tokyo Fac. of Eng.)

Keywords:semiconductor, InAs, MOSFET

There have been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness fluctuation scattering, and (3) Many interface traps. We have proposed that the combination of (111) surface orientation and Ultra-Thin-Body InAs-On-Insulator (InAs-OI) channels can solve these problems because the strong quantization causes the electron transition from the Γ to L valley, resulting in the high semiconductor capacitance and the suppression of thickness fluctuation scattering thanks to the heavy confinement mass in the L valley.