11:00 AM - 11:15 AM
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[18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF4:O2 Surface Treatment
Keywords:Ohmic contact, high temperature reliability, Silicon Carbide, Ni/Nb, CF4:O2 etching
In this research, the high temperature stability of the Ni/Nb/4H-SiC ohmic contact at 500℃ with and without CF4:O2 surface treatment was investigated. After the fabrication process, the extracted specific contact resistance of the sample with and without CF4:O2 treatment was 1.0×10−3 Ω.cm2, and 1.6×10−3 Ω.cm2, respectively. In order to investigate the high-temperature reliability, the samples were aged at 500℃ in N2 ambient. Based on the I-V curves of the Ni/Nb/4H-SiC contact with and without surface treatment after different duration of aging time, it has showed that, just after 25-hour aging at 500℃, the sample without the surface treatment lost the ohmic behavior. Whereas, the sample with CF4:O2 surface etching shows a good stability up to after 100 hours of aging. This result shows that the Ni/Nb/4H-SiC ohmic contact with CF4:O2 surface treatment could be a potential candidate for harsh environment applications.