11:15 AM - 11:30 AM
△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface
Keywords:4H-SiC, Schottky barrier height, MIGS
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)
Hiroaki Hanafusa(Hiroshima Univ.), Hirokuni Asamizu(ローム)
11:15 AM - 11:30 AM
Keywords:4H-SiC, Schottky barrier height, MIGS