The 68th JSAP Spring Meeting 2021

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-Z27-1~9] 15.4 III-V-group nitride crystals

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo)

11:15 AM - 11:30 AM

[18a-Z27-9] Characterization of Schottky barrier height for metal/lightly p-type doped GaN interface on vertical SBDs

〇Kohei Aoyama1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1 (1.Institute of Industrial Science, The University of Tokyo)

Keywords:GaN, Sputtering, Schottky barrier diode