Reaction mechanisms at 4H-SiC/SiO<sub>2</sub> interface by the coexistence of dry and wet oxidants

Tsunashi Shimizu; Toru Akiyama; Tomonori Ito; Hiroyuki Kageshima; Masashi Uematsu; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

5:30 PM - 5:45 PM

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants

〇Tsunashi Shimizu¹, Toru Akiyama¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

Keywords:4H-SiC/SiO2, Interface, First-princple calculations

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Presentation information

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO2 interface by the coexistence of dry and wet oxidants

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants