[Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO2 interface by H2 etching prior to SiO2 deposition and interface nitridation

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

2:15 PM - 2:30 PM

〇Keita Tachiki¹, Mitsuaki Kaneko¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC