Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

2:30 PM - 2:45 PM

〇Kyota Mikami¹, Koji Ito¹, Keita Tachiki¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, MOS, MOSFET